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AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 17m (VGS = 20V) RDS(ON) < 20m (VGS = 10V) RDS(ON) < 46m (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A ID TA=70C B Pulsed Drain Current IDM Power Dissipation TA=25C TA=70C PD TJ, TSTG
Maximum 30 25 8.5 6.5 40 2 1.28 -55 to 150
Units V V A
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA C Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 33
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4816
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=20V, I D=8.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=10V, I D=8.5A VGS=4.5V, I D=5A gFS VSD IS Forward Transconductance VDS=5V, ID=10A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1.5 30 13.5 17.5 16 36 17 0.76 1 4.3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.7 16.5 VGS=10V, VDS=15V, I D=8.5A 8.6 2.5 4.8 5.4 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s 5.1 14.4 3.7 16.9 6.6 17 22 20 46 2.4 Min 30 1 5 100 3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 45 40 35 30 ID (A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 45 40 Normalized On-Resistance 35 RDS(ON) (m) 30 25 20 15 10 5 0 5 10 15 20 25 30 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=20V VGS=10V VGS=4.5V 1.6 1.4 VGS=20V 1.2 1 1.8 ID=8.5A VGS=3V 3.5V 10V 6V 7V 30 25 5V ID(A) 20 15 10 5 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 25C VDS=5V
125C
VGS=10V
60 50 RDS(ON) (m) 40 30 125C 20 10 0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=8.5A IS (A)
1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=15V ID=8.5A Capacitance (pF) 1000 800 600 400 200 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Ciss
Coss
100.0
RDS(ON) limited 10s Power (W) 100s
30 25 20 15 10 5 0 0.001
TJ(Max)=150C TA=25C
ID (Amps)
10.0
1ms 10ms 0.1s
1.0
1s TJ(Max)=150C TA=25C 10s DC
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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